Building-in Better Reliability for HIGH-PERFORMANCE SiC MOSFETs: Careful design focusing on reliability, fine-tuning of parameters like gate-oxide thickness, and rigorous FIT-rate testing are essential to meet efficiency demands
In: Electronic Design, Jg. 69 (2021-03-01), Heft 2, S. 14-18
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Titel: |
Building-in Better Reliability for HIGH-PERFORMANCE SiC MOSFETs: Careful design focusing on reliability, fine-tuning of parameters like gate-oxide thickness, and rigorous FIT-rate testing are essential to meet efficiency demands
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Autor/in / Beteiligte Person: | Friedrichs, Peter |
Zeitschrift: | Electronic Design, Jg. 69 (2021-03-01), Heft 2, S. 14-18 |
Veröffentlichung: | 2021 |
Medientyp: | serialPeriodical |
ISSN: | 0013-4872 (print) |
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